Seminar

Atomic force microscopy study of domain wall motion in nanoscale capacitors

                                 
 *Speaker  :  Yun seok Kim  (Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany)
 * Time :  4 : 15 pm  on October 5 (Tuesday)
 * Location  :  E104
 *Contact    :  Prof.  Jeong  Min  Baik (052-217-2324),  jbaik@unist.ac.kr
 * Abstract                                                                                                           
 Ferroelectric/multiferroic materials have been attractive for various applications because of their unique properties. In particular, magnetoelectric multiferroic materials have been recently come into focus due to the magnetoelectric coupling of ferroelectric and magnetic properties. For memory applications, it is important to have a clear of domain wall motion and dynamics, because polarization switching is directly related to writing a bit into the memory device. However, most reports address only classical electrical macroscopic measurements of micron-scale capacitors. Considering a possible high memory density, it is necessary to observe the switching behavior of nanoscale capacitors in order to understand domain nucleation and subsequent domain wall motion, since even a single defect might have a tremendous influence on them. However, there are few reports on the direct observation of switching behavior in nanoscale capacitors and there is still lack of information on domain wall motion, including cross-talk and domain switching dynamics mostly on nanoscale systems. In this presentation, I show direct observations and analysis of the domain wall motion in sub-100 nm ferroelectric/multiferroic capacitors using atomic force microscopy.